PART |
Description |
Maker |
SA601 |
Low voltage LNA and mixer - 1GHz From old datasheet system
|
Philips
|
SA621DH SA621 |
From old datasheet system 1GHz - Low voltage LNA, mixer and VCO
|
PHILIPS[Philips Semiconductors]
|
PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D2282UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2213UK D2213 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
SY89834U SY89834UMI SY89834UMITR |
2.5V/3.3V TWO INPUT , 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR 2.5V/3.3V的两个INPUT1GHz的LVTTL / CMOS电到的LVPECL 1:4扇出缓冲翻译 2.5V/3.3V TWO INPUT 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR
|
Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
|
KH104 |
DC to 1.1GHz Linear Amplifier
|
Cadeka
|
SY89424V SY89424VZC SY89424VZCTR |
5V/3.3V FREQUENCY SYNTHESIZER 60MHz to 1GHz
|
MICREL[Micrel Semiconductor]
|